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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
*Notes:
1. V GS = 0V
0.5
*Notes:
1. V GS = 10V
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-80
2. I D = 1mA
-40 0 40 80 120
o
160
0.0
-80
2. I D = 18A
-40 0 40 80 120
o
160
Figure 9. Maximum Safe Operating Area
for FCP36N60N
1000
Figure 10. Maximum Safe Operating Area
for FCPF36N60NT
200
100
1. T C = 25 C
1. T C = 25 C
100
10
1
0.1
20 μ s
100 μ s
1ms
10ms
DC
Operation in This Area
is Limited by R DS(on)
*Notes:
o
10
1
0.1
Operation in This Area
is Limited by R DS(on)
*Notes:
o
10 μ s
100 μ s
10ms
1ms
DC
2. T J = 150 C
2. T J = 150 C
o
o
0.01
0.1
3. Single Pulse
1 10 100
V DS , Drain-Source Voltage [V]
1000
0.01
0.1
3. Single Pulse
1 10 100
V DS , Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
40
30
20
10
T C , Case Temperature [ C ]
0
25
50 75 100 125
o
150
?2010 Fairchild Semiconductor Corporation
FCP36N60N / FCPF36N60NT Rev. C2
4
www.fairchildsemi.com
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